N-Channel Power MOSFET, 150V Drain-Source Voltage, 41A Continuous Drain Current, and 45mΩ Max On-Resistance. Features a TO-220-3 package for through-hole mounting, 14ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C with a maximum power dissipation of 48W. This silicon, metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
Current Rating41A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFIB41N15DPBF technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
41A
Current Rating
41A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
45MR
Dual Supply Voltage
150V
Fall Time
14ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.52nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Through Hole
Nominal Vgs
5.5V
Number of Elements
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
200W
Radiation Hardening
No
Rds On Max
45mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
25ns
DC Rated Voltage
150V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFIB41N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFIB41N15DPBF to view detailed technical specifications.
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