N-Channel Power MOSFET, 150V Drain-Source Voltage, 41A Continuous Drain Current, and 45mΩ Max On-Resistance. Features a TO-220-3 package for through-hole mounting, 14ns fall time, and 25ns turn-off delay. Operates from -55°C to 175°C with a maximum power dissipation of 48W. This silicon, metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
Current Rating41A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFIB41N15DPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 41A |
| Current Rating | 41A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 45MR |
| Dual Supply Voltage | 150V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.52nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 150V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFIB41N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFIB41N15DPBF to view detailed technical specifications.
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