International Rectifier
IRFIB7N50A
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Current Rating6.6A
Power60W
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Technical Specifications
International Rectifier IRFIB7N50A technical specifications.
General
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 500V |
| Lead Free | Contains Lead |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Power Dissipation | 60W |
| RoHS Compliant | No |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRFIB7N50A Datasheet
Download the complete datasheet for International Rectifier IRFIB7N50A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.