IRFIB7N50APBF

Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3

Current Rating6.6A

Power60W

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International Rectifier IRFIB7N50APBF technical specifications.

Continuous Drain Current (ID)

6.6A

Current Rating

6.6A

Drain to Source Breakdown Voltage

500V

Lead Free

Packaging

Bulk

Power Dissipation

60W

RoHS Compliant

Yes

DC Rated Voltage

500V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.