International Rectifier
IRFIB7N50APBF
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
Current Rating6.6A
Power60W
Quick Jump:
Technical Specifications
International Rectifier IRFIB7N50APBF technical specifications.
General
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | 6.6A |
| Drain to Source Breakdown Voltage | 500V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 60W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFIB7N50APBF Datasheet
Download the complete datasheet for International Rectifier IRFIB7N50APBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.