IRFIBF30GPBF

Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Current Rating1.9A

Power35W

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International Rectifier IRFIBF30GPBF technical specifications.

Continuous Drain Current (ID)

1.9A

Current Rating

1.9A

Drain to Source Breakdown Voltage

900V

Lead Free

Packaging

Bulk

Power Dissipation

35W

RoHS Compliant

Yes

DC Rated Voltage

900V

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.