Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
International Rectifier IRFIBF30GPBF technical specifications.
| Continuous Drain Current (ID) | 1.9A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 900V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 35W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 900V |
| RoHS | Compliant |
No datasheet is available for this part.
