N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 55V Drain-to-Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 4A. Offers a low Drain-Source On-Resistance of 75mR and a nominal Vgs of 4V. Packaged in a SOT-223 surface mount configuration, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 2.1W. Includes fast switching characteristics with turn-on delay time of 8.1ns and fall time of 17.7ns.
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International Rectifier IRFL024NPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 2.8A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 75mR |
| Dual Supply Voltage | 55V |
| Fall Time | 17.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.8mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 22.2ns |
| Turn-On Delay Time | 8.1ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
| RoHS | Compliant |
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