N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for small signal applications. Features a 55V Drain-to-Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 4A. Offers a low Drain-Source On-Resistance of 75mR and a nominal Vgs of 4V. Packaged in a SOT-223 surface mount configuration, this RoHS compliant component operates from -55°C to 150°C with a power dissipation of 2.1W. Includes fast switching characteristics with turn-on delay time of 8.1ns and fall time of 17.7ns.
PackageSOT-223
Current Rating2.8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFL024NPBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
4A
Current Rating
2.8A
Drain to Source Breakdown Voltage
55V
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
75mR
Dual Supply Voltage
55V
Fall Time
17.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.8mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
80
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2.1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
22.2ns
Turn-On Delay Time
8.1ns
DC Rated Voltage
55V
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFL024NPBF Datasheet
Download the complete datasheet for International Rectifier IRFL024NPBF to view detailed technical specifications.
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