N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 55V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 5.1A. This single-element JFET offers a maximum power dissipation of 2.8W and an on-state resistance of 57.5mΩ. Packaged in a surface-mount TO-261AA (SOT-223) with lead-free construction, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 7.8ns and a fall time of 23ns.
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International Rectifier IRFL024ZPBF technical specifications.
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5.1A |
| Current Rating | 5.1A |
| Drain to Source Voltage (Vdss) | 55V |
| Dual Supply Voltage | 55V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 57.5MR |
| Power Dissipation | 2.8W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7.8ns |
| DC Rated Voltage | 55V |
| Width | 3.7mm |
| RoHS | Compliant |
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