IRFL024ZPBF

N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 55V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 5.1A. This single-element JFET offers a maximum power dissipation of 2.8W and an on-state resistance of 57.5mΩ. Packaged in a surface-mount TO-261AA (SOT-223) with lead-free construction, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 7.8ns and a fall time of 23ns.