N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 1.6A. Offers a low Rds On Max of 200mR and a maximum power dissipation of 2.1W. Operating temperature range from -55°C to 150°C. Packaged in a SOT-223 case.
PackageSOT-223
Current Rating1.6A
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRFL4310PBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.6A
Current Rating
1.6A
Drain to Source Voltage (Vdss)
100V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs)
20V
Height
1.7mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.1W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
80
Packaging
Rail/Tube
Power Dissipation
2.1W
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
34ns
Turn-On Delay Time
7.8ns
DC Rated Voltage
100V
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFL4310PBF Datasheet
Download the complete datasheet for International Rectifier IRFL4310PBF to view detailed technical specifications.
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