N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 100V Drain-to-Source Voltage (Vdss) and a continuous drain current (ID) of 1.6A. Offers a low Rds On Max of 200mR and a maximum power dissipation of 2.1W. Operating temperature range from -55°C to 150°C. Packaged in a SOT-223 case.
PackageSOT-223
Current Rating1.6A
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRFL4310PBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.6A |
| Current Rating | 1.6A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.7mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 80 |
| Packaging | Rail/Tube |
| Power Dissipation | 2.1W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 34ns |
| Turn-On Delay Time | 7.8ns |
| DC Rated Voltage | 100V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFL4310PBF Datasheet
Download the complete datasheet for International Rectifier IRFL4310PBF to view detailed technical specifications.
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