N-Channel Silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mount applications. Features a 100V Drain-Source Voltage (Vdss) and a continuous drain current (ID) of 1.6A, with a current rating of 2.2A. Offers a low Drain-source On Resistance of 200mR maximum. Operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 1W. Includes fast switching characteristics with a fall time of 20ns and turn-on/off delay times of 7.8ns and 34ns respectively.
PackageSOT-223
Current Rating2.2A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFL4310TRPBF technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
1.6A
Current Rating
2.2A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
200mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
20V
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Surface Mount
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
34ns
Turn-On Delay Time
7.8ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFL4310TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFL4310TRPBF to view detailed technical specifications.
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