N-Channel Power MOSFET, 150V drain-source voltage, 2.6A continuous drain current, and 185mΩ maximum drain-source on-resistance. This single-element silicon FET features a TO-261AA (SOT-223) surface-mount package, 2.8W power dissipation, and operates from -55°C to 150°C. Key electrical characteristics include 420pF input capacitance and 8.4ns turn-on delay. The component is RoHS compliant and lead-free.
PackageSOT-223
Current Rating2.6A
MountingSurface Mount
Power2.8W
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Technical Specifications
International Rectifier IRFL4315PBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | 2.6A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 185MR |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 1.8mm |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| On-State Resistance | 185R |
| Power Dissipation | 2.8W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8.4ns |
| DC Rated Voltage | 150V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFL4315PBF Datasheet
Download the complete datasheet for International Rectifier IRFL4315PBF to view detailed technical specifications.
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