N-Channel Silicon Metal-Oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of -1.1A and a drain-to-source breakdown voltage of -100V. This JFET offers a power dissipation of 2W and is packaged in a SOT-223 (TO-261AA) surface-mount package. Supplied on tape and reel, this component is lead-free and RoHS compliant.
PackageSOT-223
Current Rating-1.1A
Power2W
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Technical Specifications
International Rectifier IRFL9110TRPBF technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | -1.1A |
| Current Rating | -1.1A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Voltage (Vdss) | -100V |
| Lead Free | Lead Free |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| RoHS Compliant | Yes |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFL9110TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFL9110TRPBF to view detailed technical specifications.
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