N-Channel Power MOSFET, TO-247AC package, featuring a 55V drain-source voltage and 98A continuous drain current. Offers a low 8mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 200W. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
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| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 98A |
| Current Rating | 110A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 8MR |
| Dual Supply Voltage | 55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Lead Pitch | 5.45mm |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 5.3mm |
| RoHS | Compliant |
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