N-Channel Power MOSFET, TO-247AC package, featuring a 55V drain-source voltage and 98A continuous drain current. Offers a low 8mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 200W. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageTO-247AC
Current Rating110A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFP064NPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
98A
Current Rating
110A
Drain to Source Voltage (Vdss)
55V
Drain-source On Resistance-Max
8MR
Dual Supply Voltage
55V
Gate to Source Voltage (Vgs)
20V
Height
20.3mm
Input Capacitance
4nF
Lead Free
Lead Free
Lead Pitch
5.45mm
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
43ns
Turn-On Delay Time
14ns
DC Rated Voltage
55V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP064NPBF Datasheet
Download the complete datasheet for International Rectifier IRFP064NPBF to view detailed technical specifications.
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