N-channel power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 130A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 5.5mR at a nominal gate-source voltage of 4V. Designed for through-hole mounting in a TO-247AC plastic package, it supports a maximum power dissipation of 250W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 26ns and a fall time of 150ns.
PackageTO-247AC
Current Rating130A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFP064VPBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 130A |
| Current Rating | 130A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5.5mR |
| Fall Time | 150ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 250W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 26ns |
| DC Rated Voltage | 60V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFP064VPBF Datasheet
Download the complete datasheet for International Rectifier IRFP064VPBF to view detailed technical specifications.
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