N-channel power MOSFET featuring 60V drain-source breakdown voltage and a maximum continuous drain current of 130A. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 5.5mR at a nominal gate-source voltage of 4V. Designed for through-hole mounting in a TO-247AC plastic package, it supports a maximum power dissipation of 250W and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 26ns and a fall time of 150ns.
PackageTO-247AC
Current Rating130A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFP064VPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
130A
Current Rating
130A
Drain to Source Breakdown Voltage
60V
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5.5mR
Fall Time
150ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.76nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
Package Quantity
25
Packaging
Bulk
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
250W
Radiation Hardening
No
Rds On Max
5.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
100ns
Turn-On Delay Time
26ns
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP064VPBF Datasheet
Download the complete datasheet for International Rectifier IRFP064VPBF to view detailed technical specifications.
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