N-Channel Power MOSFET, 500V Drain-to-Source Breakdown Voltage, 22A Continuous Drain Current. Features 0.23ohm On-Resistance and 277W Power Dissipation. This silicon, metal-oxide semiconductor FET is housed in a TO-247AC package and is lead-free and RoHS compliant.
Sign in to ask questions about the International Rectifier IRFP22N50APBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFP22N50APBF technical specifications.
| Continuous Drain Current (ID) | 22A |
| Current Rating | 22A |
| Drain to Source Breakdown Voltage | 500V |
| Lead Free | Lead Free |
| Packaging | Bulk |
| Power Dissipation | 277W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFP22N50APBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
