N-Channel Power MOSFET featuring 200V drain-source voltage and 30A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a maximum on-resistance of 75mΩ and a maximum power dissipation of 214W. Designed for through-hole mounting in a TO-247AC package, it operates across a temperature range of -55°C to 175°C. Key electrical characteristics include a 20V gate-source voltage, 2.159nF input capacitance, and turn-on/off delay times of 14ns and 41ns respectively. This lead-free, RoHS-compliant component is constructed from plastic.
PackageTO-247AC
MountingThrough Hole
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Technical Specifications
International Rectifier IRFP250MPBF technical specifications.
General
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 75MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 21.1mm |
| Input Capacitance | 2.159nF |
| Lead Free | Lead Free |
| Length | 16.13mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
| Turn-On Delay Time | 14ns |
| Width | 5.2mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFP250MPBF Datasheet
Download the complete datasheet for International Rectifier IRFP250MPBF to view detailed technical specifications.
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