N-Channel Power MOSFET, TO-247AC package, featuring 200V drain-source breakdown voltage and 50A continuous drain current. Offers low 40mΩ on-state resistance and 300W maximum power dissipation. Designed for through-hole mounting with a single element configuration. Operating temperature range from -55°C to 175°C. Lead-free and RoHS compliant.
PackageTO-247AC
Current Rating50A
MountingThrough Hole
Power300W
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Technical Specifications
International Rectifier IRFP260NPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Breakdown Voltage
200V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
200V
Dual Supply Voltage
200V
Element Configuration
Single
Fall Time
48ns
Gate to Source Voltage (Vgs)
20V
Height
20.3mm
Input Capacitance
4.057nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
300W
Mount
Through Hole
Nominal Vgs
4V
Number of Elements
1
On-State Resistance
40mR
Package Quantity
25
Packaging
Bulk
Power Dissipation
300W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Turn-Off Delay Time
55ns
Turn-On Delay Time
17ns
DC Rated Voltage
200V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP260NPBF Datasheet
Download the complete datasheet for International Rectifier IRFP260NPBF to view detailed technical specifications.
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