N-Channel Power MOSFET, 250V Drain-Source Voltage, 38A Continuous Drain Current. Features 0.075ohm On-Resistance and 280W Power Dissipation. Packaged in a TO-247 case, this silicon Metal-Oxide-Semiconductor FET is lead-free and RoHS compliant.
International Rectifier IRFP264PBF technical specifications.
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