N-Channel Power MOSFET, TO-247AC package, featuring a 150V drain-source voltage and 43A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 0.042ohm on-state resistance and 200W maximum power dissipation. Designed for through-hole mounting, it operates from -55°C to 175°C and includes lead-free and RoHS compliance. Key electrical characteristics include a 20V gate-source voltage and 2.4nF input capacitance.
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International Rectifier IRFP3415PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 43A |
| Current Rating | 43A |
| Drain to Source Voltage (Vdss) | 150V |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 2.4nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| On-State Resistance | 42mR |
| Packaging | Rail/Tube |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 71ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 150V |
| Width | 5.31mm |
| RoHS | Compliant |
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