N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 25mΩ Max Drain-Source On-Resistance. Features a 200W Max Power Dissipation and operates across a wide temperature range from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AC package with through-hole mounting. Includes 14ns turn-on and 58ns turn-off delay times, with 3nF input capacitance. RoHS compliant and lead-free.
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International Rectifier IRFP3710PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 57A |
| Current Rating | 57A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 25mR |
| Dual Supply Voltage | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.3mm |
| Input Capacitance | 3nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 100V |
| Width | 5.3mm |
| RoHS | Compliant |
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