N-Channel Power MOSFET, 100V Drain-Source Voltage, 57A Continuous Drain Current, and 25mΩ Max Drain-Source On-Resistance. Features a 200W Max Power Dissipation and operates across a wide temperature range from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a TO-247AC package with through-hole mounting. Includes 14ns turn-on and 58ns turn-off delay times, with 3nF input capacitance. RoHS compliant and lead-free.
PackageTO-247AC
Current Rating57A
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRFP3710PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
57A
Current Rating
57A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
25mR
Dual Supply Voltage
100V
Gate to Source Voltage (Vgs)
20V
Height
20.3mm
Input Capacitance
3nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Nominal Vgs
4V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
58ns
Turn-On Delay Time
14ns
DC Rated Voltage
100V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP3710PBF Datasheet
Download the complete datasheet for International Rectifier IRFP3710PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
