N-Channel Power MOSFET, 200V Vdss, 65A continuous drain current, and 25mΩ max drain-source on-resistance. Features a TO-247AC through-hole package, 330W max power dissipation, and operates from -40°C to 175°C. This silicon Metal-oxide Semiconductor FET offers a 5V nominal gate-source voltage and 4.6nF input capacitance. It is RoHS compliant and lead-free.
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International Rectifier IRFP4227PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 65A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 25MR |
| Dual Supply Voltage | 240V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 330W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Width | 5.3mm |
| RoHS | Compliant |
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