N-Channel Power MOSFET, 250V Vds, 60A Continuous Drain Current, and 35.7mΩ Max Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-247AC package for through-hole mounting, offering a maximum power dissipation of 430W and an operating temperature range of -40°C to 175°C. Designed with a 5V nominal Vgs and 7.29nF input capacitance, this RoHS compliant component is ideal for high-power switching applications.
PackageTO-247AC
Current Rating60A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFP4232PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
60A
Current Rating
60A
Drain to Source Breakdown Voltage
250V
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
35.7MR
Dual Supply Voltage
250V
Gate to Source Voltage (Vgs)
20V
Input Capacitance
7.29nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-40°C
Max Power Dissipation
430W
Mount
Through Hole
Nominal Vgs
5V
Number of Elements
1
Package Quantity
25
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
430W
Radiation Hardening
No
Rds On Max
35.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
Through Hole
Threshold Voltage
5V
DC Rated Voltage
250V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP4232PBF Datasheet
Download the complete datasheet for International Rectifier IRFP4232PBF to view detailed technical specifications.
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