N-Channel Power MOSFET featuring 250V drain-source voltage and 93A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 17.5mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AC package, it operates from -55°C to 175°C with a maximum power dissipation of 520W. Key electrical characteristics include 5V threshold voltage and 10.88nF input capacitance.
PackageTO-247AC
MountingThrough Hole
Quick Jump:
Technical Specifications
International Rectifier IRFP4768PBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
93A
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
17.5MR
Dual Supply Voltage
250V
Gate to Source Voltage (Vgs)
20V
Height
20.7mm
Input Capacitance
10.88nF
Lead Free
Lead Free
Length
15.87mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
520W
Mount
Through Hole
Nominal Vgs
5V
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
Through Hole
Threshold Voltage
5V
Turn-Off Delay Time
57ns
Turn-On Delay Time
36ns
Width
5.31mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP4768PBF Datasheet
Download the complete datasheet for International Rectifier IRFP4768PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
