N-Channel Power MOSFET featuring 250V drain-source voltage and 93A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 17.5mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-247AC package, it operates from -55°C to 175°C with a maximum power dissipation of 520W. Key electrical characteristics include 5V threshold voltage and 10.88nF input capacitance.
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International Rectifier IRFP4768PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 93A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 17.5MR |
| Dual Supply Voltage | 250V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 10.88nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 36ns |
| Width | 5.31mm |
| RoHS | Compliant |
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