N-Channel Power MOSFET featuring 40V drain-source voltage and 195A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 1.3mΩ maximum drain-source on-resistance. Designed for through-hole mounting in a TO-247AC package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 366W. The component is RoHS compliant and halogen-free.
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International Rectifier IRFP7430PBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 195A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 1.3MR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 20.7mm |
| Input Capacitance | 14.24nF |
| Lead Free | Lead Free |
| Length | 15.87mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 366W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.2V |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 32ns |
| Width | 5.31mm |
| RoHS | Compliant |
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