N-Channel Power MOSFET featuring 200V drain-source voltage and 94A continuous drain current. Offers low 23mΩ on-state resistance and 580W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 43ns.
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International Rectifier IRFP90N20DPBF technical specifications.
| Package/Case | TO-247AC |
| Continuous Drain Current (ID) | 94A |
| Current Rating | 94A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 23mR |
| Dual Supply Voltage | 200V |
| Fall Time | 79ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.3mm |
| Input Capacitance | 6.04nF |
| Lead Free | Lead Free |
| Length | 15.9mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 580W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| On-State Resistance | 23mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 200V |
| Width | 5.3mm |
| RoHS | Compliant |
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