N-Channel Power MOSFET featuring 200V drain-source voltage and 94A continuous drain current. Offers low 23mΩ on-state resistance and 580W maximum power dissipation. Designed for through-hole mounting in a TO-247AC package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 23ns and turn-off delay of 43ns.
PackageTO-247AC
Current Rating94A
MountingThrough Hole
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Technical Specifications
International Rectifier IRFP90N20DPBF technical specifications.
General
Package/Case
TO-247AC
Continuous Drain Current (ID)
94A
Current Rating
94A
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
23mR
Dual Supply Voltage
200V
Fall Time
79ns
Gate to Source Voltage (Vgs)
30V
Height
20.3mm
Input Capacitance
6.04nF
Lead Free
Lead Free
Length
15.9mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
580W
Mount
Through Hole
Nominal Vgs
5V
On-State Resistance
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Turn-Off Delay Time
43ns
Turn-On Delay Time
23ns
DC Rated Voltage
200V
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFP90N20DPBF Datasheet
Download the complete datasheet for International Rectifier IRFP90N20DPBF to view detailed technical specifications.
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