N-Channel Power MOSFET, 55V drain-source voltage, 17A continuous drain current, and 75mΩ maximum drain-source on-resistance. Features a TO-252AA surface-mount package, 4.9ns turn-on delay, and 19ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. This silicon metal-oxide semiconductor field-effect transistor is RoHS compliant.
Sign in to ask questions about the International Rectifier IRFR024NTRPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFR024NTRPBF technical specifications.
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR024NTRPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
