N-Channel Power MOSFET, 55V drain-source voltage, 17A continuous drain current, and 75mΩ maximum drain-source on-resistance. Features a TO-252AA surface-mount package, 4.9ns turn-on delay, and 19ns turn-off delay. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. This silicon metal-oxide semiconductor field-effect transistor is RoHS compliant.
PackageTO-252AA
Current Rating17A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR024NTRPBF technical specifications.
General
| Package/Case | TO-252AA |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 75mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 4.9ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR024NTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR024NTRPBF to view detailed technical specifications.
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