N-Channel Power MOSFET, 100V Drain-Source Voltage, 9.4A Continuous Drain Current, and 210mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252AA (DPAK) surface-mount package, 48W maximum power dissipation, and operates from -55°C to 175°C. Key switching characteristics include a 4.5ns turn-on delay and 32ns turn-off delay. It is RoHS compliant and lead-free.
PackageDPAK
Current Rating9.1A
MountingSurface Mount
Power48W
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Technical Specifications
International Rectifier IRFR120NPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
9.4A
Current Rating
9.1A
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
210mR
Dual Supply Voltage
100V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
330pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
48W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Power Dissipation
48W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
32ns
Turn-On Delay Time
4.5ns
DC Rated Voltage
100V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR120NPBF Datasheet
Download the complete datasheet for International Rectifier IRFR120NPBF to view detailed technical specifications.
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