N-Channel Power MOSFET, 100V Drain-Source Voltage, 9.4A Continuous Drain Current, and 210mΩ Maximum Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-252 package for surface mounting, with a maximum power dissipation of 48W and an operating temperature range of -55°C to 175°C. It offers a nominal gate-source voltage of 4V and includes fast switching characteristics with a 4.5ns turn-on delay and 32ns turn-off delay.
PackageTO-252
Current Rating9.4A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR120NTRPBF technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 210mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 4.5ns |
| DC Rated Voltage | 100V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR120NTRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR120NTRPBF to view detailed technical specifications.
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