IRFR13N15DTRPBF

N-Channel Power MOSFET, 150V Vds, 14A Continuous Drain Current (ID), and 180mΩ maximum Rds On. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 86W power dissipation, and operates across a wide temperature range from -55°C to 175°C. Key switching parameters include an 8ns turn-on delay, 11ns fall time, and 12ns turn-off delay, with an input capacitance of 620pF. Designed for lead-free and RoHS compliant applications, it is supplied in tape and reel packaging.