N-Channel Power MOSFET, 150V Vds, 14A Continuous Drain Current (ID), and 180mΩ maximum Rds On. This silicon, metal-oxide semiconductor FET features a DPAK surface-mount package, 86W power dissipation, and operates across a wide temperature range from -55°C to 175°C. Key switching parameters include an 8ns turn-on delay, 11ns fall time, and 12ns turn-off delay, with an input capacitance of 620pF. Designed for lead-free and RoHS compliant applications, it is supplied in tape and reel packaging.
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International Rectifier IRFR13N15DTRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 620pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 86W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 8ns |
| Width | 6.22mm |
| RoHS | Compliant |
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