IRFR2905ZPBF

Datasheet

N-Channel MOSFET, 55V, 59A, 14.5mR, DPAK

International Rectifier

IRFR2905ZPBF

Name: IRFR2905ZPBF International Rectifier
Brand: International Rectifier
SKU: IRFR2905ZPBF

N-Channel MOSFET, 55V, 59A, 14.5mR, DPAK

N-Channel Power MOSFET, 55V Drain-Source Voltage, 42A Continuous Drain Current, and 14.5mΩ Drain-Source On-Resistance. Features a 110W maximum power dissipation and a low input capacitance of 1.38nF. Designed for surface mounting in a DPAK package, this silicon Metal-oxide Semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 35ns. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.

PackageDPAK

Current Rating42A

MountingSurface Mount

Power110W

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Technical Specifications

International Rectifier IRFR2905ZPBF technical specifications.

General

Package/Case	DPAK
Continuous Drain Current (ID)	59A
Current Rating	42A
Drain to Source Resistance	14.5mR
Drain to Source Voltage (Vdss)	55V
Drain-source On Resistance-Max	14.5MR
Fall Time	35ns
Gate to Source Voltage (Vgs)	20V
Height	2.39mm
Input Capacitance	1.38nF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	110W
Mount	Surface Mount
Nominal Vgs	4V
Number of Elements	1
Packaging	Rail/Tube
Power Dissipation	110W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	31ns
Turn-On Delay Time	14ns
DC Rated Voltage	55V
Width	6.22mm