N-Channel Power MOSFET, 55V Drain-Source Voltage, 42A Continuous Drain Current, and 14.5mΩ Drain-Source On-Resistance. Features a 110W maximum power dissipation and a low input capacitance of 1.38nF. Designed for surface mounting in a DPAK package, this silicon Metal-oxide Semiconductor FET offers fast switching with turn-on delay of 14ns and fall time of 35ns. Operates across a wide temperature range from -55°C to 175°C and is RoHS compliant.
PackageDPAK
Current Rating42A
MountingSurface Mount
Power110W
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Technical Specifications
International Rectifier IRFR2905ZPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 59A |
| Current Rating | 42A |
| Drain to Source Resistance | 14.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 14.5MR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.38nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 110W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR2905ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFR2905ZPBF to view detailed technical specifications.
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