N-channel power MOSFET featuring 30V drain-source breakdown voltage and 33A continuous drain current. Offers low on-resistance of 31mΩ at a 10V gate-source voltage. Surface mount DPAK package with 57W maximum power dissipation. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 28ns.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power57W
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Technical Specifications
International Rectifier IRFR3303TRLPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 750pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3303TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3303TRLPBF to view detailed technical specifications.
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