N-channel power MOSFET featuring 55V drain-source breakdown voltage and 71A continuous drain current. Offers a low 13mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this silicon metal-oxide semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 140W. Includes fast switching characteristics with a 13ns turn-on delay and 43ns turn-off delay.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 71A |
| Current Rating | 71A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 13mR |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 2.03nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 140W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 140W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 55V |
| Width | 6.22mm |
| RoHS | Compliant |
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