N-Channel Power MOSFET, 80V Drain-Source Voltage, 38A Continuous Drain Current, and 0.029 Ohm On-Resistance. Features include a 13ns fall time, 12ns turn-on delay, and 37ns turn-off delay. This silicon Metal-Oxide-Semiconductor FET is housed in a lead-free, plastic TO-252AA (DPAK) surface-mount package. Operating temperature range is -55°C to 175°C with a maximum power dissipation of 110W.
PackageDPAK
Current Rating38A
MountingSurface Mount
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Technical Specifications
International Rectifier IRFR3518PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 38A |
| Current Rating | 38A |
| Drain to Source Voltage (Vdss) | 80V |
| Dual Supply Voltage | 80V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 80V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3518PBF Datasheet
Download the complete datasheet for International Rectifier IRFR3518PBF to view detailed technical specifications.
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