N-Channel MOSFET, surface mount, in a TO-252-3 (DPAK) package. Features a 30V drain-source breakdown voltage and a continuous drain current of 61A. Offers a maximum drain-source on-resistance of 13mR. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 87W. Includes fast switching characteristics with turn-on delay time of 8.5ns and fall time of 3.3ns.
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International Rectifier IRFR3707TRPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 13mR |
| Fall Time | 3.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.99nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 87W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11.8ns |
| Turn-On Delay Time | 8.5ns |
| RoHS | Compliant |
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