N-Channel Power MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 61A continuous drain current. Offers a low 14mΩ drain-source resistance and 87W maximum power dissipation. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 3.7ns fall time. This surface-mount device is RoHS compliant and utilizes silicon metal-oxide semiconductor technology.
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International Rectifier IRFR3708PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 61A |
| Current Rating | 61A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 2.39mm |
| Input Capacitance | 2.417nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 87W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 17.6ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 30V |
| Width | 6.22mm |
| RoHS | Compliant |
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