International Rectifier
IRFR3708TRPBF
Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
Power87W
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Technical Specifications
International Rectifier IRFR3708TRPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 61A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12.5MR |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 2.417nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 87W |
| Mount | Surface Mount |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 87W |
| Rds On Max | 12.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFR3708TRPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3708TRPBF to view detailed technical specifications.
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