Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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International Rectifier IRFR3711TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 100A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 8.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.98nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 6000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 6.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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