N-channel MOSFET transistor in DPAK package, featuring 20V drain-source breakdown voltage and 93A continuous drain current. Offers low 5.7mR drain-source on-resistance and 79W maximum power dissipation. Designed for surface mounting with a compact DPAK footprint (6.73mm L x 6.22mm W x 2.39mm H). Operates across a wide temperature range from -55°C to 175°C.
PackageDPAK
Current Rating93A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFR3711ZPBF technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
93A
Current Rating
93A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
7.8mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
5.7MR
Dual Supply Voltage
20V
Fall Time
5.2ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
2.16nF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
79W
Mount
Surface Mount
Nominal Vgs
2V
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
79W
Radiation Hardening
No
Rds On Max
5.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
15ns
Turn-On Delay Time
12ns
DC Rated Voltage
20V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFR3711ZPBF Datasheet
Download the complete datasheet for International Rectifier IRFR3711ZPBF to view detailed technical specifications.
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