N-channel HEXFET power MOSFET designed for surface mounting in a DPAK package. Features a 55V drain-to-source breakdown voltage and a low 24.5mΩ drain-to-source resistance at a 10V gate-source voltage. Offers a continuous drain current of 30A and a maximum power dissipation of 48W. Operates across a wide temperature range from -55°C to 175°C, with fast switching characteristics including a 10ns turn-on delay and 24ns fall time. RoHS compliant and supplied in tape and reel packaging.
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International Rectifier IRFR4105ZTRLPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 24.5mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 740pF |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Radiation Hardening | No |
| Rds On Max | 24.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
| RoHS | Compliant |
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