N-Channel Power MOSFET, DPAK package, featuring 200V drain-source voltage and 24A continuous drain current. Offers a low 78mΩ maximum drain-source on-resistance. Designed for surface mounting with a maximum operating temperature of 175°C. Includes fast switching characteristics with turn-on delay of 13.4ns and fall time of 14.8ns. This silicon metal-oxide semiconductor FET is RoHS compliant.
International Rectifier IRFR4620TRLPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 78MR |
| Fall Time | 14.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 144W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25.4ns |
| Turn-On Delay Time | 13.4ns |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFR4620TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
