P-channel MOSFET, 1-element, silicon, metal-oxide semiconductor FET designed for surface mounting in a DPAK package. Features a continuous drain current of 31A, a drain-to-source voltage of -55V, and a low on-resistance of 0.065 ohms. Operates with a gate-to-source voltage up to 20V and offers a maximum power dissipation of 110W. This RoHS compliant component boasts a wide operating temperature range from -55°C to 175°C.
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International Rectifier IRFR5305PBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 31A |
| Current Rating | -31A |
| Drain to Source Voltage (Vdss) | -55V |
| Dual Supply Voltage | -55V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.39mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Power Dissipation | 110W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | -55V |
| Width | 6.22mm |
| RoHS | Compliant |
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