P-Channel Power MOSFET, 55V drain-source voltage, 31A continuous drain current, and 65mΩ maximum drain-source on-resistance. Features a 175°C maximum operating temperature, 110W power dissipation, and 1.2nF input capacitance. Designed for surface mount applications in a TO-252-3 package, this silicon Metal-oxide Semiconductor FET offers lead-free and RoHS compliance.
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International Rectifier IRFR5305TRLPBF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | -31A |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 65mR |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 110W |
| Mount | Surface Mount |
| Nominal Vgs | -4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 110W |
| Rds On Max | 65mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | -4V |
| DC Rated Voltage | -55V |
| RoHS | Compliant |
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