P-channel MOSFET, surface mount DPAK package, featuring -55V drain-source breakdown voltage and 18A continuous drain current. Offers 110mΩ maximum drain-source on-resistance and 57W maximum power dissipation. Operates from -55°C to 150°C with a 20V gate-source voltage rating. Includes 12ns turn-on delay and 16ns fall time.
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International Rectifier IRFR5505GTRPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | -55V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 55V |
| Drain-source On Resistance-Max | 110MR |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 57W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 57W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 12ns |
| Width | 6.22mm |
| RoHS | Compliant |
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