N-Channel Power MOSFET, 200V Drain-to-Source Voltage (Vdss) and 9.4A Continuous Drain Current (ID). Features 0.38ohm On-Resistance at a nominal 5.5V Gate-to-Source Voltage (Vgs). This single-element silicon FET is housed in a lead-free, plastic DPAK (TO-252AA) surface-mount package with a maximum power dissipation of 86W. Operates from -55°C to 175°C, with typical turn-on delay of 7.5ns and turn-off delay of 13ns.
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International Rectifier IRFR9N20DPBF technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9.4A |
| Current Rating | 9.4A |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.39mm |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 86W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Power Dissipation | 86W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 7.5ns |
| DC Rated Voltage | 200V |
| Width | 6.22mm |
| RoHS | Compliant |
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