N-channel MOSFET in D2PAK package, featuring 200V drain-to-source breakdown voltage and 16A continuous drain current. Offers a low 170mR drain-to-source resistance at a nominal 5.5V gate-source voltage. Designed for surface mounting, this component operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 140W. Fast switching characteristics are evident with a 6.6ns fall time and 11ns turn-on delay.
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International Rectifier IRFS17N20DPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 200V |
| Dual Supply Voltage | 200V |
| Fall Time | 6.6ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.69mm |
| Input Capacitance | 1.1nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 5.5V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 140W |
| Rds On Max | 170mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 11ns |
| Width | 10.54mm |
| RoHS | Compliant |
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