N-Channel Power MOSFET, 40V Drain-Source Voltage, 340A Continuous Drain Current, and 1.75mΩ Max Drain-Source On-Resistance. Features a 4V Threshold Voltage, 130ns Fall Time, 90ns Turn-Off Delay, and 23ns Turn-On Delay. This silicon, metal-oxide semiconductor FET offers 380W Max Power Dissipation and operates from -55°C to 175°C. Packaged in a lead-free, plastic D2PAK surface-mount package.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power380W
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Technical Specifications
International Rectifier IRFS3004PBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 1.75MR |
| Fall Time | 130ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 9.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 380W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 23ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS3004PBF Datasheet
Download the complete datasheet for International Rectifier IRFS3004PBF to view detailed technical specifications.
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