N-Channel Power MOSFET, TO-263 package, featuring a 40V Drain-Source Voltage (Vdss) and a maximum continuous drain current (ID) of 240A. This Metal-Oxide Semiconductor FET offers a low drain-source on-resistance of 1.25mΩ (max) and a maximum power dissipation of 380W. Operating across a temperature range of -55°C to 150°C, it requires a nominal gate-source voltage (Vgs) of 3.7V. The component is RoHS compliant and lead-free.
PackageTO-263
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Technical Specifications
International Rectifier IRFS3004TRL7PP technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 240A |
| Drain to Source Voltage (Vdss) | 40V |
| Drain-source On Resistance-Max | 1.25MR |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380W |
| Nominal Vgs | 3.7V |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS3004TRL7PP Datasheet
Download the complete datasheet for International Rectifier IRFS3004TRL7PP to view detailed technical specifications.
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