N-channel MOSFET transistor with 150V drain-source breakdown voltage and 33A continuous drain current. Features 56mΩ maximum drain-source on-resistance and 3.8W power dissipation. Operates from -55°C to 175°C, with turn-on delay of 13ns and fall time of 21ns. Packaged in a D2PAK surface-mount case, this RoHS compliant component is suitable for demanding applications.
PackageD2PAK
Current Rating33A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRFS33N15DPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
33A
Current Rating
33A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
56mR
Fall Time
21ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.02nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
3.8W
Radiation Hardening
No
Rds On Max
56mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
23ns
Turn-On Delay Time
13ns
DC Rated Voltage
150V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFS33N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFS33N15DPBF to view detailed technical specifications.
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