N-channel MOSFET transistor with 150V drain-source breakdown voltage and 33A continuous drain current. Features 56mΩ maximum drain-source on-resistance and 3.8W power dissipation. Operates from -55°C to 175°C, with turn-on delay of 13ns and fall time of 21ns. Packaged in a D2PAK surface-mount case, this RoHS compliant component is suitable for demanding applications.
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International Rectifier IRFS33N15DPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 33A |
| Current Rating | 33A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 56mR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.8W |
| Radiation Hardening | No |
| Rds On Max | 56mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 150V |
| RoHS | Compliant |
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