N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 130A. This silicon, metal-oxide semiconductor FET offers a low 7mΩ drain-source on-resistance and 300W power dissipation. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and includes fast switching times with a turn-on delay of 26ns and fall time of 78ns.
Sign in to ask questions about the International Rectifier IRFS4310PBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
International Rectifier IRFS4310PBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7MR |
| Dual Supply Voltage | 100V |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 7.67nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 26ns |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFS4310PBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
