N-Channel Power MOSFET, D2PAK package, featuring 100V drain-source breakdown voltage and a maximum continuous drain current of 130A. This silicon, metal-oxide semiconductor FET offers a low 7mΩ drain-source on-resistance and 300W power dissipation. Designed for surface mounting, it operates within a temperature range of -55°C to 175°C and includes fast switching times with a turn-on delay of 26ns and fall time of 78ns.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power300W
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Technical Specifications
International Rectifier IRFS4310PBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 130A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 7MR |
| Dual Supply Voltage | 100V |
| Fall Time | 78ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 7.67nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 68ns |
| Turn-On Delay Time | 26ns |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4310PBF Datasheet
Download the complete datasheet for International Rectifier IRFS4310PBF to view detailed technical specifications.
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