N-Channel Power MOSFET, 200V Drain-Source Voltage, 24A Continuous Drain Current, and 0.0775 Ohm On-Resistance. Features include a 20V Gate-to-Source Voltage, 144W Max Power Dissipation, and a -55°C to 175°C operating temperature range. This silicon Metal-Oxide-Semiconductor FET is housed in a TO-263AB (D2PAK-3) package, suitable for through-hole mounting. It offers a 1.71nF input capacitance and fast switching times with a 13.4ns turn-on delay and 25.4ns turn-off delay. RoHS compliant and lead-free.
PackageTO-262
MountingThrough Hole
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Technical Specifications
International Rectifier IRFS4620TRLPBF technical specifications.
General
| Package/Case | TO-262 |
| Continuous Drain Current (ID) | 24A |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.65mm |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 144W |
| Mount | Through Hole |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Turn-Off Delay Time | 25.4ns |
| Turn-On Delay Time | 13.4ns |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRFS4620TRLPBF Datasheet
Download the complete datasheet for International Rectifier IRFS4620TRLPBF to view detailed technical specifications.
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