N-Channel Power MOSFET, 150V Drain-Source Voltage, 51A Continuous Drain Current, and 32mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK package for surface mounting, with a 60A current rating and 3.8W power dissipation. Operating from -55°C to 175°C, it offers 16ns turn-on and 28ns turn-off delay times, with 2.77nF input capacitance. RoHS compliant and lead-free.
PackageD2PAK
Current Rating60A
MountingSurface Mount
Power3.8W
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Technical Specifications
International Rectifier IRFS52N15DPBF technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
51A
Current Rating
60A
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
32MR
Dual Supply Voltage
150V
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
2.77nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.8W
Mount
Surface Mount
Nominal Vgs
5V
Number of Elements
1
Power Dissipation
3.8W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Turn-Off Delay Time
28ns
Turn-On Delay Time
16ns
DC Rated Voltage
150V
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFS52N15DPBF Datasheet
Download the complete datasheet for International Rectifier IRFS52N15DPBF to view detailed technical specifications.
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