N-Channel Power MOSFET, 150V Drain-Source Voltage, 51A Continuous Drain Current, and 32mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide-Semiconductor FET features a D2PAK package for surface mounting, with a 60A current rating and 3.8W power dissipation. Operating from -55°C to 175°C, it offers 16ns turn-on and 28ns turn-off delay times, with 2.77nF input capacitance. RoHS compliant and lead-free.
International Rectifier IRFS52N15DPBF technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 51A |
| Current Rating | 60A |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 32MR |
| Dual Supply Voltage | 150V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 2.77nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.8W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Elements | 1 |
| Power Dissipation | 3.8W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 150V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRFS52N15DPBF to view detailed technical specifications.
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