N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 40V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 240A. Offers a low Rds On Max of 1mR and a maximum power dissipation of 245W. Operates within a temperature range of -55°C to 150°C. Packaged in TO-263-7, this lead-free and RoHS compliant component is supplied on tape and reel.
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International Rectifier IRFS7434TRL7PP technical specifications.
| Package/Case | TO-263-7 |
| Continuous Drain Current (ID) | 240A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 245W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Power Dissipation | 245W |
| Radiation Hardening | No |
| Rds On Max | 1mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 107ns |
| Turn-On Delay Time | 23ns |
| RoHS | Compliant |
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