N-Channel Insulated Gate Bipolar Transistor (IGBT) for surface mount applications. Features a 40V Drain to Source Voltage (Vdss) and a continuous drain current (ID) of 240A. Offers a low Rds On Max of 1mR and a maximum power dissipation of 245W. Operates within a temperature range of -55°C to 150°C. Packaged in TO-263-7, this lead-free and RoHS compliant component is supplied on tape and reel.
PackageTO-263-7
MountingSurface Mount
Power245W
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Technical Specifications
International Rectifier IRFS7434TRL7PP technical specifications.
General
Package/Case
TO-263-7
Continuous Drain Current (ID)
240A
Drain to Source Voltage (Vdss)
40V
Fall Time
85ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
10.25nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
245W
Mount
Surface Mount
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Power Dissipation
245W
Radiation Hardening
No
Rds On Max
1mR
RoHS Compliant
Yes
Turn-Off Delay Time
107ns
Turn-On Delay Time
23ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRFS7434TRL7PP Datasheet
Download the complete datasheet for International Rectifier IRFS7434TRL7PP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.